收藏本站
DMN3033LDM
Electrical Characteristics
@T A = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
STATIC CHARACTERISTICS
Drain-Source Breakdown Voltage
BV DSS
30
?
?
V
I D = 250 μ A, V GS = 0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 5)
Forward Transconductance (Note 5)
Diode Forward Voltage (Note 5)
T J = 25 ° C
T J = 55 ° C
I DSS
I GSS
V GS(th)
R DS (ON)
g FS
V SD
?
?
1.0
?
?
?
?
?
?
25
36
5
0.7
1
5
± 100
2.1
33
40
?
1.1
μ A
nA
V
m Ω
S
V
V DS = 30V, V GS = 0V
V DS = 0V, V GS = ± 20V
V DS = V GS , I D = 250 μ A
V GS = 10V, I D = 6.9A
V GS = 4.5V, I D = 5.0A
V DS = 10V, I D = 8A
I S = 2.25A, V GS = 0V
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resisitance
C iss
C oss
C rss
R G
?
?
?
?
755
136
108
0.89
?
?
?
?
pF
pF
pF
Ω
V DS = 10V, V GS = 0V
f = 1.0MHz
V GS = 0V, V DS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Q g
Q gs
Q gd
t D(on)
t r
t D(off)
t f
?
?
?
?
?
?
?
6.4
13.0
1.9
3.2
11
7
63
30
?
?
?
?
?
?
?
nC
nC
nC
ns
ns
ns
ns
V GS = 4.5V, V DS = 15V, I D = 5A
V GS = 10V, V DS = 15V, I D = 6.9A
V GS = 10V, V DS = 15V, I D = 6.9A
V GS = 10V, V DS = 15V, I D = 6.9A
V DD = 15V, V GS = 10V,
R D = 1.8 Ω , R G = 6 Ω
Notes:
5. Test pulse width t = 300ms.
6. Guaranteed by design. Not subject to production testing.
20
18
16
14
12
10
8
6
4
2
0
V DS = 5V
Pulsed
DMN3033LDM
Document number: DS31345 Rev. 4 - 2
2 of 5
www.diodes.com
0
1
2
3
4
July 2009
? Diodes Incorporated
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
DMN3033LSD-13 MOSFET N-CH 30V 6.9A 8-SOIC
DMN3033LSN-7 MOSFET N-CH 30V 6A SC59-3
DMN3050S-7 MOSFET N-CH 30V 5.2A SOT-23
DMN3051L-7 MOSFET N-CH 30V 5.8A SOT23-3
DMN3052L-7 MOSFET N-CH 30V 5.4A SOT23-3
DMN3052LSS-13 MOSFET N-CH 30V 7.1A 8-SOIC
DMN3110S-7 MOSFET N-CH 30V 2.5A SOT-23
DMN3112S-7 MOSFET N-CH 30V 5.8A SOT23-3
相关代理商/技术参数
DMN3033LSD 制造商:Diodes Incorporated 功能描述:MOSFET NN CH W DIOD 30V 6.9A SO8 制造商:Diodes Incorporated 功能描述:MOSFET, NN CH, W DIOD, 30V, 6.9A, SO8
DMN3033LSD-13 功能描述:MOSFET NMOS-DUAL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3033LSN 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3033LSN-7 功能描述:MOSFET N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3033LSS-13 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3050S 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE MOSFET
DMN3050S-7 功能描述:MOSFET SINGLE N-CHANNEL RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
DMN3051L 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR